? semiconductor components industries, llc, 2012 july, 2012 ? rev. 0 1 publication order number: mbraf360/d MBRAF360T3G surface mount schottky power rectifier this device employs the schottky barrier principle in a large area metal ? to ? silicon power diode. state ? of ? the ? art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. features ? low profile package for space constrained applications ? rectangular package for automated handling ? highly stable oxide passivated junction ? 150 c operating junction temperature ? guard ? ring for stress protection ? these are pb ? free and halide ? free devices mechanical charactersistics ? case: epoxy, molded, epoxy meets ul 94, v ? 0 ? weight: 95 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? cathode polarity band ? device meets msl 1 requirements ? esd ratings: machine model = c esd ratings: human body model = 3b device package shipping ? ordering information sma ? fl case 403aa style 6 schottky barrier rectifier 3.0 ampere 60 volts http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. MBRAF360T3G sma ? fl (pb ? free) 5000 / tape & reel rah = specific device code a = assembly location y = year ww = work week = pb ? free package (note: microdot may be in either location) ayww rah marking diagram
MBRAF360T3G http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 60 v average rectified forward current i f(av) 3.0 @ t l = 100 c 4.0 @ t l = 80 c a peak repetitive forward current (rated v r , square wave, 20 khz) t c = 125 c i frm 6 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 125 a storage temperature range t stg ? 65 to +150 c operating junction temperature (note 1) t j ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead (note 2) r jl 25 c/w thermal resistance, junction ? to ? ambient (note 2) r ja 90 c/w 2. 1 inch square pad size (1 x 0.5 inch for each lead) on fr4 board. electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 3) (i f = 3.0 a, t j = 25 c) v f 0.740 v maximum instantaneous reverse current (note 3) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 100 c) i r 0.15 10 ma 3. pulse test: pulse width = 300 s, duty cycle 2.0%. v f , instantaneous forward voltage (v) figure 1. typical forward voltage figure 2. maximum forward voltage i f , instantaneous forward current (a) t j = 25 c t j = 150 c t j = 100 c t j = ? 40 c v f , instantaneous forward voltage (v) t j = 25 c t j = 150 c t j = 100 c t j = ? 40 c 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 t j = 175 c 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 i f , instantaneous forward current (a) t j = 175 c
MBRAF360T3G http://onsemi.com 3 v r , instantaneous reverse voltage (v) figure 3. typical reverse current figure 4. maximum reverse current i r , instantaneous reverse current (a) t j = 25 c t j = 150 c t j = 100 c v r , instantaneous reverse voltage (v) i r , instantaneous reverse current (a) t j = 25 c t j = 150 c t j = 100 c 1.0e ? 07 1.0e ? 06 1.0e ? 05 1.0e ? 04 1.0e ? 03 1.0e ? 02 1.0e ? 01 1.0e+00 0 102030405060 t j = 175 c 1.0e ? 06 1.0e ? 05 1.0e ? 04 1.0e ? 03 1.0e ? 02 1.0e ? 01 1.0e+00 0 102030405060 t j = 175 c figure 5. typical capacitance 1000 10 60 0102030 v r , reverse voltage (v) 100 40 50 70 c, capacitance (pf) t j = 25 c
MBRAF360T3G http://onsemi.com 4 0.001 0.01 0.1 1 10 100 0.0000001 0.000001 0.00001 0.0001 1000 0.001 0.01 0.1 1 10 100 figure 6. typical transient thermal response, junction ? to ? ambient t, pulse time (s) r (t) , typical transient thermal resistance ( c/w) 50% duty cycle 20% 10% 5% 2% 1% single pulse
MBRAF360T3G http://onsemi.com 5 package dimensions sma ? fl case 403aa issue o d e b l c solder footprint* dimensions: millimeters 5.56 1.76 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 1.30 recommended notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. dim min max millimeters a 0.90 1.10 b 1.25 1.65 c 0.15 0.30 d 2.40 2.80 top view e1 bottom view 2x 2x side view a c seating plane e 4.80 5.40 e1 4.00 4.60 l 0.70 1.10 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbraf360/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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